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2 edition of Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes found in the catalog.

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

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Published by National Aeronautics and Space Administration, Glenn Research Center, National Technical Information Service, distributor in [Cleveland, Ohio], [Springfield, Va .
Written in English

    Subjects:
  • Correlation.,
  • Synchrotrons.,
  • Topography.,
  • Beam currents.,
  • Electron beams.,
  • Schottky diodes.,
  • Crystal defects.

  • Edition Notes

    StatementC.M. Schnabel ... [et al.].
    Series[NASA technical memorandum] -- NASA/TM-2000-209648., NASA technical memorandum -- 209648.
    ContributionsSchnabel, C. M., NASA Glenn Research Center.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15571734M

    Detail top view of the mesa diode in secondary electron mode of the SEM is shown in Fig. 1(a). The EBIC signal frequency spectra S EBIC [f k, x, y] were taken in the frequency range 4– Hz in rectangular raster of × noise spectra have 1/f α character, we decided to present data as the intensity map of the mean value of the natural logarithm of current noise S EBIC [4 Cited by: 2. Abstract. Recently, digital image correlation as a tool for surface defor-mation measurements has found widespread use and acceptance in the field of experimental mechanics. The method is known to reconstruct displacements with subpixel accuracy that depends on various factors such as image quality, noise, and the correlation algorithm chosen Cited by:

    Evaluation of combined EBIC/FIB methods for solar cell characterization Frank Altmann*, Jan Schischka*, Vinh Van Ngo**, Laurens F. Tz. Kwakman**, Ralf Lehmann** *Fraunhofer Insitute for Mechanics of Materials Halle ** FEI Company Drei-Länder FIB Workshop, / in Wien. Details. The measure of goodness-of-fit (gof) returned by the function ‘ebic’ depends on the class of the fitted model. If ‘object’ has class ‘glasso’ or ‘ggm’, then ‘ebic’ computes the extended Bayesian Information Criterion (eBIC) proposed in Foygel and others (): eBIC = -2*log-likelihood + a(rho)*(log(n) + 4*g*log(p)), where a(rho) denotes the number of non-zero off Author: Luigi Augugliaro.

    The electron-beam-induced-current (EBIC) technique using scanning transmission electron microscopy (STEM) has been applied to the observation of grain boundaries in polycrystalline Si. It was shown that defects in thin regions can disappear or give bright contrast in EBIC images, but are distinct in STEM images. For the sample with a high carrier concentration, the surface effect was shown to Cited by: 5.   EBIC (Electron-Beam Induced Current) is a scientific analytical technique for measuring the electrical properties of semiconductor materials & devices. Characterise the local, subsurface electronic structure of semiconductors & analyse defects. .


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Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes Download PDF EPUB FB2

NASA Center for Aerospace Information Standard Drive Hanover, MD Price Code: A02 Available from National Technical Information Service Port Royal Road Springfield, VA Price Code: A Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky by: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes.

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes C.M. Schnabel and M. Tabib-Azar Case Western Reserve University, Cleveland, Ohio P.G. Neudeck and S. Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes pCited by: At every Synchrotron White-Beam X-ray Topography (SWBXT)-identified closed core screw dislocation, an Electron Beam Induced Current (EBIC) image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the by: Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes p Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray DiffractometryCited by: For more information about growth pits investigation, please check reference 4.

For results about device and growth pits correlation, please check the application note entitled “Schottky barrier inhomogeneities in SiC Schottky contacts”. Reference: [1] “Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC SchottkyFile Size: KB.

Typical LBIC and EBIC images of plastically deformed Si samples are shown in Fig. 3b and c, respectively. The optical microscopy image of the same region after selective chemical etching is shown in Fig.

3a, where dislocation pits at the ends of half-loops can be revealed as black dots and dislocation trails can be seen as lines between them. A comparison with this optical image allows to Cited by: 3. Digital image correlation (DIC) data are being extensively used for many forming applications including constitutive law calibration, benchmark calibration, and for comparisons with finite element analysis (FEA) simulated results.

The most challenging comparisons are often in the area of strain localizations just prior to material by: 1. Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode Bin Chen,1,2,a Jun Chen,1 Takashi Sekiguchi,1,2,b Takasumi Ohyanagi,3,4 Hirofumi Matsuhata,3 Akimasa Kinoshita,3 Hajime Okumura,3 and Filippo Fabbri1,5 1National Institute for Materials Science, TsukubaJapan 2Doctral Program of Pure and Applied Sciences, University of Tsukuba.

JOURNAL DE PHYSIQUE - Fig.1 - Schematic illustration of configurations used in EBIC observations of dis- locations.

(A): Schottky barrier and (B): p-n junction charge collection. where D and T are the hole diffusion coefficient and lifetime, respectively, and g(r) is the generation rate per unit volume due to.

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes p Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray DiffractometryCited by: 3.

Khosravani, Ali, "Application of High Resolution Electron Backscatter Diffraction(HR-EBSD) Techniques to Twinning Deformation Mechanism in AZ31 Magnesium Alloy" ().

All Theses and Dissertations. Cited by: 2. This article examines morphological defects in 4H–SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes.

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes Conference Paper Materials Science Forum, vol.pp. ©Trans Tech Publications. Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes.

[C M Schnabel; NASA Glenn Research Center,] -- We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits.

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes p Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray DiffractometryCited by: 7. Background: Bioimpedance spectroscopy (BIS) is an established tool for the measurement of extracellular fluid in lymphedema.

This study assesses the validity of BIS measurements using the l-Dex ® for evaluating the effectiveness of interventions to treat lymphedema. Measurements are correlated with limb volume, assessment of pitting edema, physiologic measures of lymphatic Cited by: 3.

Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition. Authors; S.G. Bailey, H.B. Su, M. Dudle, R.P. Raffaelle: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes, Mater. Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes Author: Ishwara B.

Bhat. An EBIC image of the test structure with a mm diameter contact biased at − V is shown in Fig. 2(a). Fig. 2(b) shows an optical image of the same test structure after KOH etching with etch pits visible in the picture as black observed three types of etch pits and, based on Ref., identified the etch pits as signatures of screw and edge types of threading dislocations as shown Cited by:.

Table of contents – Volume / Show all volumes and issues. Tables of content are generated automatically and are based on records of articles contained that are available.Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes p Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray DiffractometryCited by: 1.The remainder of this section considers results obtained using the optimal filter setting and a pixel ROI.

Fig. 5 shows the variation of measured components of the displacement gradient tensor a ij as a function of the nominal rotation applied to the sample. Components a 13 and a 31 increase linearly with nominal applied rotation, and have approximately equal magnitude but opposite by: